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The electric field-driven ion transport operation is a schematic diagram (a) of constructing a nano-sized VO2 device, a TEM photograph (b) and its excellent metal insulator transition (c) and switching characteristics (d, e).
Memory is the carrier of information records, and it is also one of the core and cornerstones of modern information technology. It plays an important role in various fields such as data centers, scientific research, and military and national defense. With the advent of the era of big data, the global information volume has exploded, and the demand for new high-density information storage has become increasingly urgent. Therefore, regulating the physicochemical properties of electronic materials at the nanoscale will provide unprecedented opportunities for the development of future information devices with ultra-small size, ultra-fast response speed, and ultra-low power consumption.
Resistor Random Access Memory (RRAM) based on electro-resistive effect has the advantages of non-volatile, simple structure, low power consumption, high density, fast read and write, and is considered as one of the most promising new storage technologies. Researcher Li Runwei, a researcher at the Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, separately studied the resistance and mechanism of inorganic and organic materials in zinc oxide, cerium oxide, yttrium oxide, cobalt ferrite, and poly. In thin film materials such as Schiff base and metal-organic frameworks, stable resistance was obtained at the nanoscale by controlling physical and chemical processes such as active metal ions or oxygen ion migration, functional group adsorption/desorption, and organic ion doping, respectively. effect. However, when realizing large-scale integration in a cross array, severe leakage and crosstalk between adjacent RRAM devices greatly fluctuates the read/write reliability of the resistive memory. Therefore, the development of highly reliable gate devices is of great significance for the development and application of resistive memory.
Vanadium dioxide (VO2) is a typical strong associated electronic material. It has unique reversible metal-insulator transition (MIT) characteristics and bidirectional volatile switching characteristics. It is one of the important candidate materials for preparing gate tube devices. However, due to the coexistence of multi-domain structures during the phase transition and the stochastic evolution from stage to stage, the electrical behavior of the vanadium dioxide sample will undergo an avalanche-like multi-level transformation, which greatly reduces the steepness and uniformity of the device resistance change. Its practical application. In response to this situation, researcher Liu Runhe and doctoral student Xue Wuhong of the Li Runwei team developed an electric field driven oxygen ion transport operation to construct vertically distributed quasi-one-dimensional VO2 nanochannels at room temperature in vanadium pentoxide (V2O5) films. new method. It was found that by reducing the size of VO2 nanochannels (length ~80 nm, diameter <20 nm) to the typical size (100 nm ~ 1 μm) of various domain structures in conventional VO2 thin films, the multi-domain structure during phase transition can be significantly reduced. The probability of co-existence and progressive evolution at random, thus effectively limiting the vanadium dioxide metal-insulator transition behavior within the nanometer range of the VO2 channel. The Pt/VO2 nanochannel/Pt device prepared by this method has reliable metal-insulator transition and volatile switching characteristics. The switching response time of the device is only 17ns, and the dispersion coefficient of the driving voltage and device resistance is lower than 4.3%. Energy consumption is only about 8pJ. At the same time, this work has demonstrated for the first time in the world that a stable metal-insulator transition can still be obtained in ultra-small sized vanadium dioxide samples with diameters below 20 nm, thus providing a theoretical basis for the development of ultra-small VO2 electronic devices. Utilizing the stable and reliable switching characteristics of VO2 nanostructures, the team made a nanoscale VO2 device in series with a HfO2 memory cell to prepare a 10×10 crossover memory array with a 1S1R structure. The array can be reliably stored and accurately read in 1 million continuous operations, and finally validated the use of an electric field-driven ion transport operation to construct functional nano-conducting channels and regulate their transport operations at the nanometer scale to iso-materialization. The availability of features provides a new method for building the next generation of high-performance gating devices.
The above work was supported by the national key R&D program, the National Natural Science Foundation Jieqing Project and the Zhejiang Outstanding Young Scientists Fund. The related results were published on Advanced Materials online and applied for a Chinese invention patent.
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