Japan Developed CIGS Photovoltaic Panel Without PID Degradation

Japan Developed CIGS Photovoltaic Panel Without PID Degradation

The Japan Industrial Technology Research Institute (hereinafter referred to as “Production Research Institute”) announced on March 18 that it has developed CIGS-type compound photovoltaic panels that are not prone to PID deterioration. PID is the abbreviation of Potential Induced Degradation, which means potential potential-induced attenuation, which can cause the photovoltaic power plant to generate less power.

The PID phenomenon is a performance degradation phenomenon when the panels are connected in series and used under a high voltage, which results in a significant decrease in power generation. In 2005, China's photovoltaic panel makers reported this phenomenon for the first time. Afterwards, photovoltaic power plants in Europe and the United States also discovered a significant drop in output power, which became a major problem.

The reason for the PID phenomenon is that under conditions of high temperature and high humidity, if the photovoltaic panel is subjected to a high voltage, sodium ions will diffuse from the glass substrate into the sealing material, thereby invading the surface of the battery cell (power generation element) and internal.

The CIGS PV cell panel developed by ZIC has not used the usual EVA as a sealing material, but uses an ionomer resin (adding a small amount of metal ions to the copolymer of ethylene and methacrylate to cross-link molecules. Resin). The production integrative research found through the PID test that the anti-PID performance of this CIGS photovoltaic panel is higher than the silicon photovoltaic panel. In addition, the use of an ionomer having a high volume resistivity as a sealing material further improves the anti-PID performance.

Up to now, Japan's megawatt photovoltaic power station has not found any cases of deterioration due to PID. However, long-term stable power generation has a large impact on earnings, so it is estimated that this phenomenon will receive more and more attention in the future.

The CIGS photovoltaic cell uses a compound semiconductor composed of five elements of copper (Cu), indium (In), selenium (Se), gallium (Ga), and sulfur (S), and can be sufficiently realized by a light absorbing layer having a thickness of only 2 μm. The light absorbs, and substrates can also use inexpensive glass and metal thin films, so that photovoltaic cells, which are low in cost and can obtain high conversion efficiency, have attracted attention. In terms of CIGS photovoltaic cells, Solar Frontier (Minato-ku, Tokyo) has started a mass-production plant with an annual output of 900MW, and Japan's photovoltaic power plants have also begun to be used one after another. (Reporter: Ching Long, Nihonbashi BP Cleantech Institute)

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