The 10th International Conference on New Diamond and Nano Carbon Materials was held in Xi'an

May 22-26, 2016, jointly organized by the International NDNC Executive Committee, Xi'an Jiaotong University, China Vacuum Society, Shaanxi Science and Technology Association, Shaanxi Vacuum Society, Pan-Pacific Diamond and its Electronic Devices Pan Pacific International R&D and Industry Alliance Hosted, Xi'an Jiaotong University, Shaanxi Vacuum Society, Xi'an University of Electronic Science and Technology, Suzhou University and Pan Pacific International R&D and Industry Alliance of Monocrystalline Diamond and its Electronic Devices jointly hosted the 10th International Conference on New Diamonds and Nano-Carbon Materials (NDNC2016) Held in Xi'an.
More than 350 experts and scholars from different countries and regions participated in the international seminar. The international symposium was led by academician Hou Wei of optoelectronics expert, academician Wang Zhanguo of semiconductor expert, academician Xue Qunji of solid lubrication expert, academician Zou Guangtian of superhard material expert, academician Hao Yue of wide-bandgap semiconductor expert and academician Li Shutang of material chemistry and physics expert. Honorary President of the conference. The chairman of the conference was appointed by Professor Wang Hongxing, a special expert of the National Thousand Talents Program of Xi'an Jiaotong University and the executive director of the Shaanxi Vacuum Society. Professor David Awschalom, an international diamond expert, the American Academy of Sciences, the American Academy of Engineering, and the American Academy of Arts and Sciences "Three Institutes", presented the research results of his research team in the field of diamond spin semiconductor devices. Wang Shuguo, president of Xi'an Jiaotong University, attended and gave a welcome speech.
The International Conference on Diamond and Nano-Carbon Materials (NDNC) was formed by the merger of two international conferences (Application Diamond Conference ADC and Diamond New Technology International Symposium ICNDST), which was officially held in Japan in 2006. After more than ten years of development, the seminar has developed into one of the international academic conferences in the field of diamonds and carbon materials. The conference will last for four days and will arrange a Nobel Prize winner's special report (Penary), 6 conference invitations (Keynote) report, 44 or so invitations (Invited Speaker) report, 132 oral presentations. Academic report (Oral) and 256 posters (Poster). In addition, more than a dozen companies and instrument manufacturers held related exhibitions at the same time.
Ultra-wide bandgap semiconductor diamonds combines excellent electrical, optical, mechanical, acoustic, mechanical and thermal properties in high temperature, high efficiency, ultra high power microwave millimeter wave electronic devices, power electronics, biosensors, photodetection and imaging, particles The detection and imaging, aerospace, micro-mechanical, quantum communication and imaging single-photon source systems have extremely important application prospects, and are known as "semiconductors" by the industry. Diamond electronic devices have the advantages of small size, high integration, and no need for refrigeration compared to other semiconductor devices. It will exert its unique advantages in energy saving and emission reduction and building a green earth, which will trigger a new round of revolution in semiconductor technology. The research and development of diamond-based ultra-wide bandgap semiconductor materials and devices has become the high-tech commanding point of the world's industrial and technological powers. It is semiconductor science, materials science, high temperature electronics, megawatt solid state electronics, and ultra-high power density. Frontier research fields in microwave and millimeter wave electronics.
The conference provided an academic exchange platform for experts, scholars, technicians and entrepreneurs in the fields of single crystal diamond materials, electronic devices, diamond single crystal growth equipment, etc., and strengthened mutual understanding between domestic and foreign counterparts and entrepreneurs. Cooperation to jointly promote the vigorous development of international single crystal diamond materials and their electronic components industry and related industries. Through the exchanges of experts and scholars in various related fields at home and abroad, the progress of the world's new ultra-wide bandgap semiconductors and their new carbon materials research fields, new experimental methods and theories, further condensing key scientific issues, summarizing the basic laws, and providing Theoretical basis and experimental methods, comprehensively promote interdisciplinary and inter-disciplinary substantive cooperation based on advanced carbon materials, promote the construction of China's single crystal diamond semiconductor materials and electronic device research platform, and promote international through joint efforts The progress and development of research on single crystal diamond and its electronic devices has expanded the application and transformation of advanced electronic materials and devices.
The experts at the meeting agreed that single crystal diamond should enter the semiconductor gate, and should focus on the growth technology of high quality large area single crystal diamond wafer and electronic device grade single crystal diamond film, which is an important basis for single crystal diamond doping and application. . In addition, the defect characteristics, doping, carrier transport regulation, ohmic contact and Schottky contact of single crystal diamond are also the entry permit for single crystal diamond to enter the semiconductor application field. At the same time, the research on the formation of heterojunction and heterogeneous structure between strong diamond and other semiconductors should open up new applications of diamond-based semiconductors in the field of energy band engineering and quantum devices.

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